ON Semiconductor’s Intelligent Power Module Wins “Top 10 Power Product”
2014-10-24
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  • BEIJING, China – Sept. 25, 2014 –  ON Semiconductor Corporation (Nasdaq: ONNN, driving energy efficient innovations, has won dual awards for a single product in China's 12th Annual “Top 10 Power Products Awards” jointly hosted by Electronic Products China and 21ic.com. The company’s STK57FU391A-E Intelligent Power Module (IPM) was named a “Top 10 Power Product” and was honored with a second “Technology Breakthrough Award”.

    ON Semiconductor’s winning IPM, which combines a power factor correction (PFC) converter with a 3-phase inverter stage to provide a 3-phase motor drive, takes advantage of the company’s innovative Insulated Metal Substrate Technology (IMST®), which forms electronic circuits on plates of aluminium. The metal's high thermal conductivity enables power output circuits, control circuits, and the modules peripheral circuits to be mounted on the same substrate. The IMST has been proven to be reliable and cost-effective, with high efficiency and low noise emission.

    The annual Top 10 Power Products Awards program has become a benchmark for the industry to identify high-quality products. It recognizes a range of power products which undergo a strict evaluation and recommendation process by an expert judging panel. The nominated products were measured against three principal criteria: design innovation, price-performance and technological advancement.

    "It's an exceptional honor for us to be recognized with two awards for this product," said Chris Chey, general manager of IPM Products Division at ON Semiconductor. "The award program recognizes the STK57FU391A-E as an exceptional product. Back in 1969, ON Semiconductor was the first company in the world to form electronic circuits on metal substrates, and we've been leading the field in practical applications of that technology ever since."

    Key features of the STK57FU391A-E Intelligent Power Module include built-in protection against over current and pre-drive low voltage conditions; direct input of CMOS level control signals; and availability of a single power supply drive by using a bootstrap circuit with a built-in IPM.


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